Nitride (Si₃N₄) mask of the LOCOS process. The grid points inside the mask join the oxide mechanics solve (OxidationDeformation) as a elastic body with stress memory (Maxwell creep when viscosity > 0): oxide and nitride share nodes and interface faces, so velocity and traction are continuous across their interface by construction. More...

#include <lsOxidationMask.hpp>

Public Attributes
double	youngModulus = 270e9
double	poissonRatio = 0.27
double	viscosity = 0.
double	shearActivationVolume = 0.

Detailed Description

Nitride (Si₃N₄) mask of the LOCOS process. The grid points inside the mask join the oxide mechanics solve (OxidationDeformation) as a elastic body with stress memory (Maxwell creep when viscosity > 0): oxide and nitride share nodes and interface faces, so velocity and traction are continuous across their interface by construction.

Member Data Documentation

◆ poissonRatio

double viennals::OxidationMaskParameters::poissonRatio = 0.27

◆ shearActivationVolume

double viennals::OxidationMaskParameters::shearActivationVolume = 0.

◆ viscosity

double viennals::OxidationMaskParameters::viscosity = 0.

◆ youngModulus

double viennals::OxidationMaskParameters::youngModulus = 270e9

The documentation for this struct was generated from the following file:

include/viennals/lsOxidationMask.hpp