viennals::OxidationPresets Struct Reference

Named parameter presets for common thermal oxidation processes. More...

#include <lsOxidationPresets.hpp>

Static Public Member Functions
static OxidationParameters	wet1000CDealGrove100 ()
	Wet oxidation at 1000 °C (Deal-Grove linear-parabolic coefficients). B/2 = D_eff = 0.157 µm²/hr, B/A = k_s = 0.74 µm/hr. Stress-coupling activation volumes from Kao et al. (1987).
static OxidationDeformationParameters	oxideMechanics1000C (double timeStep)
	Thermal SiO2 viscoelastic mechanics at 1000 °C. Viscosity ~1×10¹⁰ Pa·hr (Irene 1978), shear modulus ~3×10¹⁰ Pa. Pass the advection time step so the viscoelastic relaxation is consistent.
static OxidationMaskParameters	siliconNitrideMask1000C ()
	LPCVD Si3N4 mask creep at 1000 °C (Hu 1991; Senez et al. 1994). referenceViscosity = 5×10¹¹ Pa·hr at 1273.15 K with Arrhenius scaling: E_a = 3.86×10⁵ J/mol ≈ 4 eV (Senez, IEEE Trans. Electron Devices, 1994). Set temperature in OxidationMaskParameters (or via psOxidation) to get the correct viscosity at a temperature other than 1000 °C.

Detailed Description

Named parameter presets for common thermal oxidation processes.

Each method returns a fully populated parameter struct for a specific, documented process condition. The names encode the condition deliberately — a user calibrating for a different temperature or ambient should supply their own struct rather than modifying these.

Sources: Deal-Grove coefficients — B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965); wet-oxidation values at 1000 °C from Table I. Oxide mechanics — E. A. Irene, J. Electrochem. Soc. 125, 1708 (1978); viscosity and elastic moduli for thermal SiO2 near 1000 °C. Silicon nitride creep — S. M. Hu, J. Appl. Phys. 70, R53 (1991); reference viscosity for LPCVD Si3N4 at 1000 °C.

Member Function Documentation

oxideMechanics1000C()

OxidationDeformationParameters viennals::OxidationPresets::oxideMechanics1000C ( double timeStep )

inlinestatic

Thermal SiO2 viscoelastic mechanics at 1000 °C. Viscosity ~1×10¹⁰ Pa·hr (Irene 1978), shear modulus ~3×10¹⁰ Pa. Pass the advection time step so the viscoelastic relaxation is consistent.

siliconNitrideMask1000C()

OxidationMaskParameters viennals::OxidationPresets::siliconNitrideMask1000C ( )

inlinestatic

LPCVD Si3N4 mask creep at 1000 °C (Hu 1991; Senez et al. 1994). referenceViscosity = 5×10¹¹ Pa·hr at 1273.15 K with Arrhenius scaling: E_a = 3.86×10⁵ J/mol ≈ 4 eV (Senez, IEEE Trans. Electron Devices, 1994). Set temperature in OxidationMaskParameters (or via psOxidation) to get the correct viscosity at a temperature other than 1000 °C.

wet1000CDealGrove100()

OxidationParameters viennals::OxidationPresets::wet1000CDealGrove100 ( )

inlinestatic

Wet oxidation at 1000 °C (Deal-Grove linear-parabolic coefficients). B/2 = D_eff = 0.157 µm²/hr, B/A = k_s = 0.74 µm/hr. Stress-coupling activation volumes from Kao et al. (1987).

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The documentation for this struct was generated from the following file:

• include/viennals/lsOxidationPresets.hpp