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| static OxidationParameters | wet1000CDealGrove100 () |
| | Wet oxidation at 1000 °C (Deal-Grove linear-parabolic coefficients). B/2 = D_eff = 0.157 µm²/hr, B/A = k_s = 0.74 µm/hr. Stress-coupling activation volumes from Kao et al. (1987).
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| static OxidationDeformationParameters | oxideMechanics1000C (double timeStep) |
| | Thermal SiO2 viscoelastic mechanics at 1000 °C. Viscosity ~1×10¹⁰ Pa·hr (Irene 1978), shear modulus ~3×10¹⁰ Pa. Pass the advection time step so the viscoelastic relaxation is consistent.
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| static OxidationMaskParameters | siliconNitrideMask (double temperatureCelsius) |
| | LPCVD Si3N4 mask: E = 270 GPa, nu = 0.27, and Maxwell creep with an Eyring viscosity from Senez et al. (1996), Table II: eta_N = 6e16 / 3.1e16 / 5e15 / 1.1e15 P and V_N = 120 / 130 / 170 / 350 A^3 at 800 / 900 / 1000 / 1100 °C (relaxation ~1 h at 1000 °C, critical shear 2kT/V_N 0.21 GPa). Between the points log(eta_N) is linear in 1/T and V_N linear in T; outside, eta_N follows the end segment's trend and V_N keeps the end value (the table covers 800-1100 °C).
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| static OxidationMaskParameters | siliconNitrideMask1000C () |
Named parameter presets for common thermal oxidation processes.
Each method returns a fully populated parameter struct for a specific, documented process condition. The names encode the condition deliberately — a user calibrating for a different temperature or ambient should supply their own struct rather than modifying these.
Sources: Deal-Grove coefficients — B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965); wet-oxidation values at 1000 °C from Table I. Oxide mechanics — E. A. Irene, J. Electrochem. Soc. 125, 1708 (1978); viscosity and elastic moduli for thermal SiO2 near 1000 °C. Stress-dependent viscosity — P. Sutardja and W. G. Oldham, IEEE Trans. Electron Devices 36, 2415 (1989); shear activation volume 300 A^3 (the common TCAD default). Nitride creep — V. Senez et al., IEEE Trans. Electron Devices 43, 720 (1996), Table II (calibrated on LOCOS shapes, 800-1100 °C).
1.18.0